Kyung Rok Kim
2004: Ph. D. Electrical Engineering
and Computer Science, Seoul
National University
2001: M. S. Electrical Engineering
and Computer Science, Seoul
National University
1999: B. S. Electrical Engineering,
Seoul National University
2020~present: Professor, UNIST
2019~2020: (Tenured) Associate Professor, UNIST
2014~2019: Associate Professor UNIST
2010~2014: Assistant Professor UNIST
2006~2010: Senior Engineer,
Samsung Electronics, Semiconductor
Research Center, CAE/TCAD
2004~2006: Postdoctoral Fellow,
Stanford University, CIS TCAD group
2020: Samsung Paper Prize
(26th KCS)
2019: UNIST Young Distinguished Professor
2019: Best Chip Design Contest Prize
(26th KCS/CDC)
2019: 25th HumanTech Paper Award
(Samsung)
2017: 23rd HumanTech Paper Award
(Samsung)
2016: 22nd HumanTech Paper Award
(Samsung)
2015: Nanoscale Horizons Poster
Prize (15th IEEE-NANO)
2012~Present: Editor, JSTS (IEEK)
2010~2012: Editing Committee of ITRS
Member of IEEE, Electron Device Society
Member of IEIE (Korea), IEICE (Japan)
Nano-Electronic Emerging Devices Lab.
차세대 나노 전자소자는 페타스케일 초저전력 디지털 및 THz 아날로그 반도체 시스템을 구현하는데 필수적인 연구 분야로서, 현재 기가급 CMOS 기반 반도체 시스템의 성능을 개선하면서 소모전력을 감소하는 반도체 소자 기술이 중요한 이슈이다. 우리 실험실은 초고성능/초저전력 동작의 새로운 소자를 나노구조의 신물질 및 나노전자회로 연구와 병행하여, 다치로직 및 메모리, 뇌신경모방소자, 플라즈마파 소자 기반 THz 신호원 및 검출기 응용연구를 하고 있다.
Development of nano-electronic emerging devices (NEEDs) is main research focus to achieve ultra-low power peta-scale digital and RF applications in THz bandwidth. Our laboratory research about novel “beyond CMOS” devices as well as high-performance /low-power nano-CMOS for multi-valued logic and memory applications, neuromorphic devices, plasma wave transistor (PWT) THz emitter and detectors based on nano-scale structures using Si/Ge/C-based and III-V novel materials as well as nano-electronic circuit design.
Development of nano-electronic emerging devices (NEEDs) is main research focus to achieve ultra-low power peta-scale digital and RF applications in THz bandwidth. Our laboratory research about novel “beyond CMOS” devices as well as high-performance /low-power nano-CMOS for multi-valued logic and memory applications, neuromorphic devices, plasma wave transistor (PWT) THz emitter and detectors based on nano-scale structures using Si/Ge/C-based and III-V novel materials as well as nano-electronic circuit design.

Nano-CMOS, Neuromorphic Device, Multi-Value Logic, THz Plasma-Wave Transistor (PWT) , Monolithic Transistor-Antenna (Trantenna), THz Imaging
Nano-CMOS, Neuromorphic Device, Multi-Value Logic, THz Plasma-Wave Transistor (PWT) , Monolithic Transistor-Antenna (Trantenna), THz Imaging
Neuromorphic Processing-in-Memory Architecture, THz Spectroscopy, Near-Field THz Imaging
Neuromorphic Processing-in-Memory Architecture, THz Spectroscopy, Near-Field THz Imaging
● 실시간 테라헤르츠 영상구현을 위한 다중-픽셀 테라헤르츠파 검출기
Multi-pixel plasmonic THz detector for real-time THz imaging application
● 나노 CMOS 기반 테라헤르츠 플라즈마파 소자 기술 연구 (신호원 및 검출기)
Nano-CMOS based terahertz (THz) plasma-wave transistor technology research
● 초저전력 인공신경망을 위한 다치로직/메모리 소자 및 뇌신경모방 소자 (Samsung’s Future Tech Fostering Project: Next-generation semiconductor)
Multi-valued logic/memory devices and neuromorphic devices for artificial neural network
● Multi-pixel plasmonic THz detector for real-time THz imaging application
● Nano-CMOS based terahertz (THz) plasma-wave transistor technology research
● Multi-valued logic/memory devices and neuromorphic devices for artificial neural network
(Samsung’s Future Tech Fostering Project: Next-generation semiconductor)
국가과학기술표준분류
ED. 전기/전자 > ED04. 반도체소자·시스템 > ED0499. 달리 분류되지 않는 반도체소자/시스템
● IEEE Electron Device Letters, Performance Enhancement of Silicon-Based Sub-Terahertz Detector by Highly Localized Plasmonic Wave in Nano-Ring FET, E-San Jang/ Min Woo Ryu/ Ramesh Patel/ Sang Hyo Ahn/ Ki Jin Han/ Kyung Rok Kim, (2021.12)
● Nature Electronics, Tunnelling-based ternary metal–oxide–semiconductor technology, Jae Won Jeong/ Young-Eun Choi/ Woo-Seok Kim/ Jee-Ho Park/ Sunmean Kim/ Sunhae Shin/ Kyuho Lee/ Jiwon Chang/ Seong-Jin Kim/ Kyung Rok Kim, (2019.07)
● Symposium on VLSI Technology and Circuits, Record-High Performance Trantenna based on Asymmetric Nano-Ring FET for Polarization-Independent Large-Scale/Real-Time THz Imaging, E-San Jang/ Min Woo Ryu/ Ramesh Patel/ Sang Hyo Ahn/ Hyeong Ju Jeon/ Ki Jin Han/ Kyung Rok Kim, (2019.06)
● [국외] TERNARY DIGIT LOGIC CIRCUIT, 김경록/신선해/장이산/정재원 (2018. 11)
● [국외] RING-TYPE FIELD EFFECT TRANSISTOR FOR TERAHERTZ WAVE DETECTION, WHICH USES GATE METAL AS ANTENNA,
김경록/류민우/안상효 (2018. 07)