Faculty Research Profile
Soo-Hyun Kim
학력
• 1999~2003: Ph.D. School of Materials Science and Engineering, Seoul National University
• 1999: M.S. Department of Metallurgical Engineering, Seoul National University
• 1993~1997: B.S. Department of Metallurgical Engineering, Seoul National University
주요 경력
• 2019~2020: Consulting Professor, SK Hynix Semiconductor
• 2012~2013: Visiting Professor, Department of Chemistry and Chemical Biology, Harvard University
• 2007~2022: Professor, School of Materials Science and Engineering, Yeungnam University
• 2003~2007: Senior Researcher, R&D Division, Hynix Semiconductor, Korea
수상/학회/외부활동
• 2019~2021: 전문위원(RB), 국책연구본부 나노·반도체단, National Research Foundation of Korea (NRF)
• 2014~present: Asian Committee Member of IEEE IITC (International Interconnect Technology Conference)
• General Co-Chair of 2017, 2020, 2023 IEEE IITC
• Program Co-chair of 2021 IEEE IITC
• 한국 반도체 학술대회 (Korean Conference on Semiconductors, KCS) Interconnect and Packaging 분과 분과 위원
나노소자공정연구실
Nano-Device Process Laboratory
나노소자공정 연구실은 반도체 소자 제작을 위한 원자층 증착법(atomic layer deposition, ALD), 혹은 영역 선택 원자층 증착법(area-selectiveatomic layer deposition, AS-ALD) 공정 기술에 대해 연구한다. 특히, 반도체 배선 공정을 위한 다양한 nano-scale 박막에 대한 원자층 증착 공정에 대해 심도있는 연구를 수행한다. 연구 개발된 원자층 증착 공정은 반도체 소자 제작 공정으로의 응용 이외에, 2차원, 3차원 나노 소재를 기능화 시켜서 수소 발생용촉매, 에너지 저장 소자의 전극 으로 적용하는 것에 대한 연구도 진행하고 있다. 또한 나노 소재, 나노 박막에 대한 투과전자현미경(transmission electron microscopy, TEM) 분석및 원자층 증착법을 위한 새로운 유기금속 전구체(metalorganic precursor)의 합성에 대한 연구도 진행하고 있다.
Professor Soo-Hyun Kim’s current research interests and topics are focused on developments of the process technology for nanoscale thin films using atomic layer deposition (ALD) and area-selective ALD (AS-ALD), and their applications into the advanced Cu metallization, emerging interconnects technology for semiconductor devices. He is also focusing on the development of advanced nanomaterials using ALD for clean energy conversion, storing, and sensing. For the successful development of ALD process, suitable precursors with excellent properties such as high vapor pressure, thermal stability, high reactivity with the reactant etc. are necessary and the new ALD precursor development for high-performance ALD process is one of his research topics.
Professor Soo-Hyun Kim’s current research interests and topics are focused on developments of the process technology for nanoscale thin films using atomic layer deposition (ALD) and area-selective ALD (AS-ALD), and their applications into the advanced Cu metallization, emerging interconnects technology for semiconductor devices. He is also focusing on the development of advanced nanomaterials using ALD for clean energy conversion, storing, and sensing. For the successful development of ALD process, suitable precursors with excellent properties such as high vapor pressure, thermal stability, high reactivity with the reactant etc. are necessary and the new ALD precursor development for high-performance ALD process is one of his research topics.
연구분야
원자층 증착법, 영역선택 원자층 증착법, 배선공정, 전구체 / atomic layer deposition, area-selective atomic layer deposition, metallization, precursor
atomic layer deposition, area-selective atomic layer deposition, metallization, precursor
연구주제
원자층 증착법, 영역 선택 원자층 증착법, 배선 공정, 박막 증착, 수소 생산, 투과전자현미경 분석
Atomic layer deposition, Area-selective atomic layer deposition, Metallization, Thin film deposition, H2 production, Transmission electron microscopy
Atomic layer deposition, Area-selective atomic layer deposition, Metallization, Thin film deposition, H2 production, Transmission electron microscopy
국가연구개발사업 기술 분류체계
국가과학기술표준분류
EB. 재료 > EB06. 열·표면처리 > EB0603. 박막제조기술
논문
• Chem. Mater. (2025), 37, 4743-4757, "Highly Conductive Ultrathin Niobium Carbide Thin Films as Next-Generation Diffusion Barriers for Cu and Ru Interconnects Prepared by Plasma-Enhanced Atomic Layer Deposition", https://doi.org/10.1021/acs.chemmater.5c00557
• Advanced Science (2025) e03561, "Advanced Atomic Layer Modulation Based Highly Homogeneous PtRu Precious Metals Alloy Thin Films", ttps://doi.org/10.1002/advs.202503561
• Advanced Science (2023) 2206355, “Process Controlled Ruthenium on 2D Engineered V-MXene via Atomic Layer Deposition for Human Healthcare Monitoring” https://doi.org/10.1002/advs.202206355
• Adv. Funct. Mater. (2022), 32, 2206667, "Atomic Layer Deposited RuO2 Diffusion Barrier for Next Generation Ru-Interconnects" https://doi.org/10.1002/adfm.202206667
• Chem. Mater. (2022), 34, 1533−1543, “Atomic Layer Deposition of Iridium Using a Tricarbonyl Cyclopropenyl Precursor and Oxygen”, https://doi.org/10.1021/acs.chemmater.1c03142 (selected as a front cover)
특허
• Method for forming Ruthenium Thin Film, Soo-Hyun Kim and Yohei Kotsugi, Jul.06.2023 (US-2023-0212741-A1)
• 루테늄 박막 형성 방법, 김수현, 이현정, 나베야 슌이치, 2019.04.23 (KR 10-1973549)
• 원자층 증착법에 의한 박막 형성 방법, 이를 포함하는 반도체 소자의 배선 및 그 제조 방법, 천태훈, 김수현, 2012. 10. 26, (KR 10-1196746)