Faculty Research Profile
Tae-Sik Yoon
학력
• 2002 : Ph.D. Materials Science and Engineering, Seoul National University
• 1998 : M.S. Metallurgical Engineering, Seoul National University
• 1996 : B.S. Metallurgical Engineering, Seoul National University
주요 경력
• 2021 - Present : Professor, UNIST
• 2017 - 2020 : Professor, Myongji University
• 2012 - 2016 : Associate Professor, Myongji University
• 2007 - 2011 : Assistant Professor, Myongji University
• 2007 : Senior Researcher, Memory Division, Samsung Electronics Co. Ltd.
• 2004 - 2006 : Postdoctoral researcher, UCLA
• 2002 - 2004 : Postdoctoral researcher, Seoul National University
수상/학회/외부활동
• 2021 - 2023 : International Editorial Board Member of Materials Science in Semiconductor Processing (ELSEVIER)
• 2020 : Commendation from Minister of Ministry of Science and ICT for the contribution to semiconductor technology development
• 2017 : Best Poster Award from Materials Research Society (MRS) Fall Meeting, USA
• Member of Materials Research Society
• Member of Electrochemical Society
• Member of The Korean Institute of Metals and Materials
반도체 나노소자 연구실
Nano Semiconductor Research Laboratory
반도체 나노소자 연구실(NSRL)은 반도체 재료, 공정, 소자 연구를 수행하는 연구실로서, 현재 한국연구재단과 삼성미래기술육성 사업의 지원을 받아 차세대 반도체 소자로서 뉴로모픽 시스템의 인공 시냅스 소자, 멤컴퓨팅 소자, 비휘발성 메모리 소자 연구를 수행하고 있습니다.
Nano Semiconductor Research Laboratory(NSRL) performs the research on semiconductor materials, processes, and devices, particularly next generation semiconductor devices including artificial synaptic devices for brain-inspired neuromorphic computing system, mem-computing devices, and nonvolatile memory devices, which are supported by National Research Foundation of Korea and Samsung Research Funding & Incubation Center for Future Technology.
Nano Semiconductor Research Laboratory(NSRL) performs the research on semiconductor materials, processes, and devices, particularly next generation semiconductor devices including artificial synaptic devices for brain-inspired neuromorphic computing system, mem-computing devices, and nonvolatile memory devices, which are supported by National Research Foundation of Korea and Samsung Research Funding & Incubation Center for Future Technology.
연구분야
반도체 재료 및 소자, 비휘발성 메모리, 뉴로모픽 소자, 박막 트랜지스터 / Semiconductor materials and devices, Nonvolatile memory, Neuromorphic devices, Thin-film transistors
Semiconductor materials and devices, Nonvolatile memory, Neuromorphic devices, Thin-film transistors
연구 희망분야
반도체 재료 및 소자 / Semiconductor materials and devices
Semiconductor materials and devices
연구주제
반도체 재료 및 소자, 비휘발성 메모리, 박막트랜지스터, 뉴로모픽 소자
Semiconductor materials and devices, Nonvolatile memory, Thin-film transistors, Neuromorphic devices
Semiconductor materials and devices, Nonvolatile memory, Thin-film transistors, Neuromorphic devices
국가연구개발사업 기술 분류체계
국가과학기술표준분류
ED. 전기/전자 > ED04. 반도체소자·시스템 > ED0405. 반도체 재료
논문
• ACS Applied Materials & Interfaces / Enhanced Nonvolatile Electrochemical Random-Access Memory and Artificial Synapse Characteristics through Oxygen Ion-Exchange Engineering in an Atomic-Layer-Deposited HfO2–x Gate Insulator and a Zinc Oxide Channel Layer / Jimin Han, Taeyun Noh, Boyoung Jeong, Peter Hayoung Chung, Garam Park, Min-Hyun Lee, Yumin Kim, Tae-Sik Yoon / 2025-06
• ACS Applied Materials & Interfaces / Artificial Synaptic Properties in Oxygen-Based ElectrochemicalRandom-Access Memory with CeO2 Nanoparticle Assembly as GateInsulator for Neuromorphic Computing / Boyoung Jeong, Taeyun Noh, Jimin Han, Jiyeon Ryu, Jae-Gwan Park, Younguk Kim, Yonghoon Choi, Sehyun Lee, Jongnam Park, and Tae-Sik Yoon / 2025-03
• Advanced Electronic Materials / Self-selective crossbar synapse array with n-ZnO/p-NiOx/n-ZnO structure for neuromorphic computing / Peter Hayoung Chung, Jiyeon Ryu, Daejae Seo, Dwipak Prasad Sahu, Minju Song, Junghwan Kim, and Tae-Sik Yoon / 2025-02
특허
• Semiconductor Device with multiple floating gates for multi-level capacitance change, Tae-Sik Yoon, Patent No. US11,810,983, Nov. 17, 2023.
• 문턱 스위칭 선택소자 및 그의 제조방법 / 윤태식, Dwipak Prasad Sahu, 등록번호: 10-2810371, May. 15, 2025.