Faculty Research Profile
Hongsik Jeong
학력
• 1992 : 연세대학교 물리학과 박사
• 1987 : 연세대학교 물리학과 석사
• 1985 : 연세대학교 물리학과 학사
주요 경력
• 2019 - Present : 울산과학기술원 신소재공학 교수, 미래 반도체 연구센터장
• 2016 - 2019 : 칭화대(베이징 소재) 전자공학과 교수인공지능 센터 교수
• 2014 - 2016 : 연세대학교 융합기술원 연구 교수
• 1992 - 2014 : 삼성 반도체 DRAM과 신 메모리 개발 임원
수상/학회/외부활동
• 2005 : 대통령 표창(신 메모리소자 개발)
• IEEE Senior Member
미래 반도체 연구실
Future Semiconductor Technology
미래 반도체 연구실은 More Moore와 More Than Moore 관련 원천 기술 연구 그리고 반도체 소재/부품/장비 기술 지원 연구를 통한 원천 연구와 개발된 기술의 산업화에 기여하는 것이 목표임
o More Moore
- 고유전 소재, 저유전 소재 연구 개발
- 2D 소재를 이용한 반도체 소자의 극한 Scaling 연구
- 적층형 차세대 반도체 소자 연구
o More Than Moore
- 차세대 Memristor 소자 연구
- Memristor 기반 AI Chip 연구
o 반도체 소재/부품/장비 기술 지원
- 반도체 소재 국산화 및 원천 기술 지원으로 반도체 산업의 지속 발전에 기여
- Test BED 구축 및 기술 지원
The Future Semiconductor Lab aims to contribute to the industrialization of the developed technology and source research through research on the source technology related to More Moore and More Than Moore, as well as technology support for semiconductor materials/parts/equipment.
o More Moore
- Research and development of high dielectric materials and low dielectric materials
- Research on extreme scaling of semiconductor devices using 2D materials
- Research on stacked next-generation semiconductor devices
o More Than Moore
- Research on next-generation Memristor devices
- Research on Memristor-based AI Chip
o Semiconductor material/part/equipment technical support
- Contribute to the sustainable development of the semiconductor industry by localizing
semiconductor materials and supporting original technology
- Test bed construction and technical support
The Future Semiconductor Lab aims to contribute to the industrialization of the developed technology and source research through research on the source technology related to More Moore and More Than Moore, as well as technology support for semiconductor materials/parts/equipment.
o More Moore
- Research and development of high dielectric materials and low dielectric materials
- Research on extreme scaling of semiconductor devices using 2D materials
- Research on stacked next-generation semiconductor devices
o More Than Moore
- Research on next-generation Memristor devices
- Research on Memristor-based AI Chip
o Semiconductor material/part/equipment technical support
- Contribute to the sustainable development of the semiconductor industry by localizing
semiconductor materials and supporting original technology
- Test bed construction and technical support
연구분야
반도체,멤리스터,인공지능소자 / Semiconductor, Memristor, Artificial intelligence device
Semiconductor, Memristor, Artificial intelligence device
연구 희망분야
반도체 소재/소자/설계 융합 연구, 미래 반도체 연구 플랫폼 구축 / Semiconductor material/device/design convergence research, Construction of future semiconductor research platform
Semiconductor material/device/design convergence research, Construction of future semiconductor research platform
연구주제
• 메모리 소자 및 반도체 공정
Memory device and semiconductor process
• 신메모리(STT-MRAM/ PCM) 연구 및 개발
New memory(STT-MRAM / PCM) research and development
• AI 소자 및 에너지 효율적 컴퓨팅 연구
AI device and energy efficient computing research
• Memory device and semiconductor process
• New memory(STT-MRAM / PCM) research and development
• AI device and energy efficient computing research
국가연구개발사업 기술 분류체계
국가과학기술표준분류
ED. 전기/전자 > ED04. 반도체소자·시스템 > ED0401. Si 소자
논문
• Nature Communications, “Spontaneous sparse learning for PCM-based memristor neural networks” , Dong-Hyeok Lim, Shuang Wu, Rong Zhao, Jung-Hoon Lee, Hongsik Jeong & Luping Shi / 2021-01
• IEEE TRANSACTIONS ON ELECTRON DEVICES, “Exploring Cycle-to-Cycle and Deviceto-Device Variation Tolerance in MLC Storage-Based Neural Network Training” , Lee Jung-Hoon, Jeong Hongsik, Lim Dong-Hyeok, Ma Huimin, Shi Luping / 2019-05
• JOURNAL OF PHYSICS D-APPLIED PHYSICS, “Memristor devices for neural networks”, Jeong Hongsik, Shi Luping / 2019-01
특허
• Artificial neuron semiconductor element having three-dimensional structure and artificial neuron semiconductor system using same / US10014348B2 / Hongsik Jeong et. al
• Variable resistance memory device and a variable resistance memory system including the same / US 9230642B2 / Hongsik Jeong et. al